Level: Medium | Understand magnetic energy storage to boost voltage.
Objective and use case
In this practical case, you will build a basic open-loop Boost converter to demonstrate how an inductor stores and releases magnetic energy to step up a DC voltage.
Why it is useful:
* Allows battery-powered devices to operate at higher voltages (e.g., generating 5 V from a single 3.7 V Li-ion cell).
* Drives strings of LEDs that require a constant, high forward voltage.
* Captures and steps up voltage in energy harvesting and regenerative braking systems.
* Provides versatile power rails in compact portable electronics without requiring multiple batteries.
Expected outcome:
* You will observe the inductor current (I_inductor) ramping up when the switch is closed and ramping down when it opens.
* The output voltage (V_out) will be demonstrably higher than the input voltage source.
* You will record the direct relationship between the switch’s Duty Cycle and the resulting V_out magnitude.
Target audience and level:
Intermediate electronics students learning the fundamentals of switch-mode power supplies.
Materials
V1: 5 V DC source, function: main power inputV2: Pulse voltage source (0-5 V, 100kHz, 50% duty cycle), function: PWM signal for the switchL1: 100 µH inductor, function: magnetic energy storageM1: N-channel MOSFET (e.g., IRLZ44N), function: main switching elementD1: Schottky diode (e.g., 1N5819), function: prevents reverse current from capacitorC1: 47 µF capacitor, function: output voltage smoothingR1: 100 Ω resistor, function: basic load to discharge capacitor
Wiring guide
V1: connects betweenVINand0(GND).V2: connects betweenGATE_PWMand0(GND).L1: connects betweenVINandSW_NODE.M1: Drain connects toSW_NODE, Gate connects toGATE_PWM, Source connects to0(GND).D1: Anode connects toSW_NODE, Cathode connects toVOUT.C1: connects betweenVOUTand0(GND).R1: connects betweenVOUTand0(GND).
Conceptual block diagram

Schematic
Control Signal:
[ V2: PWM (0-5 V) ] --(GATE_PWM)--> [ M1:Gate ]
Power & Switching Path:
[ V1: 5 V DC ] --(VIN)--> [ L1: 100µH ] --(SW_NODE)--> [ M1:Drain ] --(Switch)--> [ M1:Source ] --> GND
|
Boost Output & Load: |
+--> [ D1: Schottky ] --(VOUT)--> [ R1: 100 Ω ] --> GND
|
+--> [ C1: 47µF ] --> GND
Electrical diagram

Measurements and tests
- Initial state check: Apply
V1(5 V) withV2turned off (0% duty cycle). MeasureVOUT. The voltage should be roughly 4.7 V (the 5 V input minus the forward voltage drop of the Schottky diode). - Switching activation: Activate
V2to supply a 100kHz square wave at a 50% duty cycle. MeasureVOUTacrossR1. The voltage should rise to approximately 9 V-10 V, demonstrating the step-up action. - Inductor current observation: Probe the current flowing through
L1(I_inductor). You will observe a triangular waveform. The upward slope occurs whileM1is ON (energy storage), and the downward slope occurs whileM1is OFF (energy release toVOUT). - Duty Cycle mapping: Adjust the Duty Cycle of
V2from 30% to 70% in 10% increments. RecordVOUTat each step to verify that a higher duty cycle yields a higher output voltage.
SPICE netlist and simulation
Reference SPICE Netlist (ngspice) — excerptFull SPICE netlist (ngspice)
* Boost converter storage
* Main power input
V1 VIN 0 DC 5
* PWM signal for the switch (100kHz, 50% duty cycle)
V2 GATE_PWM 0 PULSE(0 5 0 10n 10n 5u 10u)
* Magnetic energy storage
L1 VIN SW_NODE 100u
* Main switching element (N-channel MOSFET)
* Drain: SW_NODE, Gate: GATE_PWM, Source: 0, Bulk: 0
M1 SW_NODE GATE_PWM 0 0 IRLZ44N
* Prevents reverse current from capacitor
* Anode: SW_NODE, Cathode: VOUT
D1 SW_NODE VOUT 1N5819
* Output voltage smoothing
* ... (truncated in public view) ...Copy this content into a .cir file and run with ngspice.
* Boost converter storage
* Main power input
V1 VIN 0 DC 5
* PWM signal for the switch (100kHz, 50% duty cycle)
V2 GATE_PWM 0 PULSE(0 5 0 10n 10n 5u 10u)
* Magnetic energy storage
L1 VIN SW_NODE 100u
* Main switching element (N-channel MOSFET)
* Drain: SW_NODE, Gate: GATE_PWM, Source: 0, Bulk: 0
M1 SW_NODE GATE_PWM 0 0 IRLZ44N
* Prevents reverse current from capacitor
* Anode: SW_NODE, Cathode: VOUT
D1 SW_NODE VOUT 1N5819
* Output voltage smoothing
C1 VOUT 0 47u
* Basic load to discharge capacitor
R1 VOUT 0 100
* Models
.model IRLZ44N NMOS(Level=1 VTO=2.0 KP=10.0 RS=0.05 RD=0.05)
.model 1N5819 D(IS=1e-6 RS=0.1 N=1.05 EG=0.69 XTI=2)
* Output Directives
* VOUT is the main output, GATE_PWM is the input stimulus
.print tran V(VOUT) V(GATE_PWM) V(SW_NODE) V(VIN) I(L1)
* Analysis
* Time constant is R*C = 4.7ms. Simulating for 10ms to observe steady-state boost voltage.
.op
.tran 0.1u 10m
.endSimulation Results (Transient Analysis)
Show raw data table (119800 rows)
Index time v(vout) v(gate_pwm) v(sw_node) v(vin) l1#branch 0 0.000000e+00 4.702912e+00 0.000000e+00 5.000000e+00 5.000000e+00 4.702912e-02 1 1.000000e-10 4.702912e+00 5.000000e-02 4.999798e+00 5.000000e+00 4.702912e-02 2 2.000000e-10 4.702912e+00 1.000000e-01 4.999798e+00 5.000000e+00 4.702912e-02 3 4.000000e-10 4.702912e+00 2.000000e-01 4.999797e+00 5.000000e+00 4.702912e-02 4 8.000000e-10 4.702912e+00 4.000000e-01 4.999797e+00 5.000000e+00 4.702912e-02 5 1.600000e-09 4.702912e+00 8.000000e-01 4.999797e+00 5.000000e+00 4.702912e-02 6 3.200000e-09 4.702912e+00 1.600000e+00 4.999797e+00 5.000000e+00 4.702913e-02 7 6.400000e-09 4.702910e+00 3.200000e+00 8.651034e-03 5.000000e+00 4.710899e-02 8 1.000000e-08 4.702907e+00 5.000000e+00 6.306948e-03 5.000000e+00 4.728872e-02 9 1.064000e-08 4.702906e+00 5.000000e+00 6.311218e-03 5.000000e+00 4.732068e-02 10 1.192000e-08 4.702905e+00 5.000000e+00 6.319746e-03 5.000000e+00 4.738460e-02 11 1.448000e-08 4.702902e+00 5.000000e+00 6.336800e-03 5.000000e+00 4.751244e-02 12 1.960000e-08 4.702897e+00 5.000000e+00 6.370908e-03 5.000000e+00 4.776811e-02 13 2.984000e-08 4.702887e+00 5.000000e+00 6.439123e-03 5.000000e+00 4.827946e-02 14 5.032000e-08 4.702866e+00 5.000000e+00 6.575553e-03 5.000000e+00 4.930212e-02 15 9.128000e-08 4.702825e+00 5.000000e+00 6.848406e-03 5.000000e+00 5.134738e-02 16 1.732000e-07 4.702743e+00 5.000000e+00 7.394086e-03 5.000000e+00 5.543754e-02 17 2.732000e-07 4.702643e+00 5.000000e+00 8.060152e-03 5.000000e+00 6.042981e-02 18 3.732000e-07 4.702543e+00 5.000000e+00 8.726166e-03 5.000000e+00 6.542142e-02 19 4.732000e-07 4.702443e+00 5.000000e+00 9.392128e-03 5.000000e+00 7.041236e-02 20 5.732000e-07 4.702343e+00 5.000000e+00 1.005804e-02 5.000000e+00 7.540264e-02 21 6.732000e-07 4.702243e+00 5.000000e+00 1.072390e-02 5.000000e+00 8.039225e-02 22 7.732000e-07 4.702143e+00 5.000000e+00 1.138970e-02 5.000000e+00 8.538119e-02 23 8.732000e-07 4.702043e+00 5.000000e+00 1.205546e-02 5.000000e+00 9.036947e-02 ... (119776 more rows) ...
Common mistakes and how to avoid them
- Using a standard rectifier diode (e.g., 1N4007): Standard diodes are too slow to turn off at 100kHz, leading to massive switching losses and poor voltage conversion. Always use a fast-recovery or Schottky diode like the 1N5819.
- Inductor core saturation: If the inductor’s maximum current rating is lower than the peak switching current, the magnetic core will saturate. The inductor will then act as a short circuit, potentially destroying the MOSFET. Always verify the inductor’s saturation current rating.
- Operating without a load: Running a boost converter with no load resistor (
R1) can cause the output voltage to continuously rise with every switching cycle, theoretically reaching infinity and destroying the output capacitor or MOSFET. Always include a minimum load.
Troubleshooting
- Symptom: Output voltage equals the input voltage (minus diode drop).
- Cause: The MOSFET is not switching.
V2might be disconnected or the voltage level is too low to surpass the MOSFET’s gate threshold. - Fix: Check the
GATE_PWMsignal with an oscilloscope. Use a logic-level MOSFET if your PWM signal is limited to 3.3 V or 5 V. - Symptom: MOSFET becomes extremely hot very quickly.
- Cause: The inductor is saturating, or the MOSFET has a high ON-resistance (RDS(on)) and is experiencing high conduction losses.
- Fix: Swap the inductor for one with a higher current rating. Ensure the gate drive voltage is sufficient to turn the MOSFET completely ON.
- Symptom: Unstable or highly rippled output voltage.
- Cause: The output capacitor
C1is too small for the load or has a high Equivalent Series Resistance (ESR). - Fix: Increase the capacitance of
C1or place a ceramic capacitor in parallel with the electrolytic capacitor to lower the overall ESR.
Possible improvements and extensions
- Closed-loop control: Add a voltage divider at the output connected to an error amplifier or microcontroller analog input. Dynamically adjust the PWM duty cycle to maintain a constant
VOUTregardless of changes inR1(the load). - Synchronous rectification: Replace the Schottky diode
D1with a second P-channel or driven N-channel MOSFET. Switching this second MOSFET synchronously (inversely toM1) reduces the voltage drop typical of a diode, significantly improving overall converter efficiency.
More Practical Cases on Prometeo.blog
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